首页 Products Field Effect Transistor (MOS)

产品目录

Type Channel ESD Process VDS(V) VGS(V) ID(A) VGS(th) Min.(V) VGS(th) Max.(V) RDS(on)@10VTyp. RDS(on)@4.5VTyp. RDS(on)@2.5VTyp. Package Status 申请样品
TN10H40NTE N N/A Trench 100 ±20 40 1 2.5 24mΩ(Max.) 25mΩ(Max.) TO-252 EP 申请样品
TNG10H45NTE N N/A SGT 100 ±20 45 1 2.5 14mΩ 18mΩ TO-252 MP 申请样品
TNG10H80NTE N N/A SGT 100 ±20 80 1 2.5 8mΩ(Max.) 10mΩ(Max.) TO-252 EP 申请样品
TNG10H13PTE P N/A SGT -100 ±20 -13 1 2.5 150mΩ(Max.) 165mΩ(Max.) TO-252 EP 申请样品
TNG10H18PTE P N/A SGT -100 ±20 -18 1 2.5 105mΩ(Max.) 120mΩ(Max.) TO-252 EP 申请样品
TN10H30PTE P N/A Trench -100 ±20 -30 1 3 50mΩ(Max.) 65mΩ(Max.) TO-252 EP 申请样品
TNG10H30PTE P N/A SGT -100 ±20 -30 1 3 47mΩ(Max.) 56mΩ(Max.) TO-252 EP 申请样品
TN15H07NTE N N/A Trench 150 ±20 7 1 2.5 250mΩ(Max.) 330mΩ(Max.) TO-252 PP 申请样品
TN20H05NTE N N/A Planar 200 ±20 5 1 3 570mΩ(Max.) TO-252 EP 申请样品
TN20H18NTE N N/A Planar 200 ±20 18 1 3 150mΩ(Max.) TO-252 EP 申请样品
TN50H02NTE N N/A Planar 500 ±30 2 2 4 6.6Ω(Max.) TO-252 EP 申请样品
TN50H03NTE N N/A Planar 500 ±30 3 2 4 2.6Ω(Max.) TO-252 EP 申请样品
TN50H05NTE N N/A Planar 500 ±30 5 2 4 1.5Ω(Max.) TO-252 MP 申请样品
TN50H07NTE N N/A Planar 500 ±30 7 2 4 1.3Ω(Max.) TO-252 EP 申请样品
TN60H02NTE N N/A Planar 600 ±30 2 2 4 4.5Ω(Max.) TO-252 EP 申请样品
TN60H04NTE N N/A Planar 600 ±30 4 2 4 1.9Ω(Max.) TO-252 EP 申请样品
TN60H04ANTE N N/A Planar 600 ±30 4 2 4 2.7Ω(Max.) TO-252 EP 申请样品
TN60H04BNTE N N/A Planar 600 ±30 4 2 4 2.3Ω(Max.) TO-252 EP 申请样品
TN60H05NTE N N/A Planar 600 ±30 5 2 4 1.7Ω(Max.) TO-252 EP 申请样品
TN60H07NTE N N/A Planar 600 ±30 7 2 4 1.3Ω(Max.) TO-252 MP 申请样品