Type Channel ESD Process VDS(V) VGS(V) ID(A) VGS(th) Min.(V) VGS(th) Max.(V) RDS(on)@10VTyp. RDS(on)@4.5VTyp. RDS(on)@2.5VTyp. Package Status 申请样品
TN80N60TE N N/A Trench 60 ±20 80 1 2.5 7.5mΩ(Max.) 9mΩ(Max.) TO-252 EP 申请样品
TNG80N60TE N N/A SGT 60 ±20 80 1 2.5 5.7mΩ(Max.) 8mΩ(Max.) TO-252 EP 申请样品
TN80N68TE N N/A Trench 68 ±20 80 2 4 8.6mΩ(Max.) TO-252 MP 申请样品
TNG12P60TE P N/A SGT -60 ±20 -12 -1 -2.5 110mΩ(Max.) 140mΩ(Max.) TO-252 EP 申请样品
TNG20P60TE P N/A SGT -60 ±20 -20 -1 -2.5 76mΩ(Max.) 115mΩ(Max.) TO-252 EP 申请样品
TN30P60TE P N/A Trench -60 ±20 -30 -1 -2.5 30mΩ(Max.) 36mΩ(Max.) TO-252 EP 申请样品
TNG30P60TE P N/A SGT -60 ±20 -30 -1 -2.5 40mΩ(Max.) 51mΩ(Max.) TO-252 MP 申请样品
TNG40P60TE P N/A SGT -60 ±20 -40 -1 -2.5 26mΩ(Max.) 27mΩ(Max.) TO-252 MP 申请样品
TNG60P60TE P N/A SGT -60 ±20 -60 -1 -2.5 16mΩ(Max.) 20mΩ(Max.) TO-252 MP 申请样品
TNG85P60TE P N/A SGT -60 ±20 -85 -1.2 -2.5 11mΩ(Max.) 13mΩ(Max.) TO-252 EP 申请样品
TNG30C60TM N N/A Trench 60 ±20 35 1 2.5 25mΩ(Max.) 35mΩ(Max.) TO-252 MP 申请样品
TNG30C60TM P Trench -60 ±20 -30 -1 -2.5 45mΩ(Max.) 56mΩ(Max.) TO-252 MP 申请样品
TN10H08NTE N N/A Trench 100 ±20 8 1 2.5 150mΩ(Max.) 180mΩ(Max.) TO-252 EP 申请样品
TNG10H08NTE N N/A SGT 100 ±20 8 1 2.5 130mΩ(Max.) 160mΩ(Max.) TO-252 EP 申请样品
TN10H10NTE N N/A Trench 100 ±20 10 1 2.5 115mΩ(Max.) 140mΩ(Max.) TO-252 MP 申请样品
TN10H15NTE N N/A Trench 100 ±20 15 1 3 80mΩ 93mΩ TO-252 MP 申请样品
TN10H20NTE N N/A Trench 100 ±20 20 1 2.5 48mΩ(Max.) 55mΩ(Max.) TO-252 EP 申请样品
TN10H25NTE N N/A Trench 100 ±20 25 1 2.5 38mΩ(Max.) 40mΩ(Max.) TO-252 EP 申请样品
TNG10H25NTE N N/A SGT 100 ±20 25 1 2.5 24mΩ(Max.) 30mΩ(Max.) TO-252 EP 申请样品
TN10H30NTE N N/A Trench 100 ±20 30 1 2.5 32mΩ(Max.) 36mΩ(Max.) TO-252 EP 申请样品