首页 Products Field Effect Transistor (MOS)

产品目录

Type Channel ESD Process VDS(V) VGS(V) ID(A) VGS(th) Min.(V) VGS(th) Max.(V) RDS(on)@10VTyp. RDS(on)@4.5VTyp. RDS(on)@2.5VTyp. Package Status 申请样品
TN10DN30PA N Double N/A Trench 30 ±20 10 1 2.5 12mΩ(Max.) 18mΩ(Max.) SOP-8 EP 申请样品
TN10N30PA N N/A Trench 30 ±20 10 1 2.5 13mΩ(Max.) 23mΩ(Max.) SOP-8 EP 申请样品
TN13N30PA N N/A Trench 30 ±20 13 1 2.5 10mΩ(Max.) 17mΩ(Max.) SOP-8 MP 申请样品
TN15N30PA N N/A Trench 30 ±20 15 1 2.5 7.5mΩ(Max.) 14mΩ(Max.) SOP-8 MP 申请样品
TN18N30PA N N/A Trench 30 ±20 15 1 2.5 6mΩ(Max.) 8.6mΩ(Max.) SOP-8 EP 申请样品
TN20N30PA N N/A Trench 30 ±20 20 1 2.5 5.5mΩ(Max.) 6.9mΩ(Max.) SOP-8 MP 申请样品
TN08C30PA N N/A Trench 30 ±20 8 1 2.5 24mΩ(Max.) 40mΩ(Max.) SOP-8 MP 申请样品
TN08C30PA P Trench -30 ±20 -7 -1 -3 50mΩ(Max.) 70mΩ(Max.) SOP-8 MP 申请样品
TN08C30JPA N N/A Trench 30 ±20 8 1 2.5 31mΩ(Max.) 40mΩ(Max.) SOP-8 EP 申请样品
TN08C30JPA P Trench -30 ±20 -7 -1 -3 60mΩ(Max.) 87mΩ(Max.) SOP-8 EP 申请样品
TN10C30PA N N/A Trench 30 ±20 10 1 2 23mΩ(Max.) 30mΩ(Max.) SOP-8 MP 申请样品
TN10C30PA P Trench -30 ±20 -10 -1 -2 47mΩ(Max.) 56mΩ(Max.) SOP-8 MP 申请样品
TN12C30PA N N/A Trench 30 ±20 10 1 2 12mΩ(Max.) 18mΩ(Max.) SOP-8 EP 申请样品
TN12C30PA P Trench -30 ±20 -10 -1 -2 25mΩ(Max.) 35mΩ(Max.) SOP-8 EP 申请样品
TN09N40PA N N/A Trench 40 ±20 9 1 2.5 18mΩ 25mΩ SOP-8 MP 申请样品
TN10N40PA N N/A Trench 40 ±20 10 1 2.5 14.3mΩ(Max.) 19.6mΩ(Max.) SOP-8 MP 申请样品
TN13N40PA N N/A Trench 40 ±20 13 1 2.5 12.5mΩ(Max.) 18mΩ(Max.) SOP-8 MP 申请样品
TNG07N40PA N N/A SGT 40 ±20 7 1 2.5 18mΩ(Max.) 25mΩ(Max.) SOP-8 EP 申请样品
TNG10N40PA N N/A SGT 40 ±20 10 1 2.5 12mΩ(Max.) 18mΩ(Max.) SOP-8 EP 申请样品
TN07DN40PA N Double N/A Trench 40 ±20 7 1 2.5 25mΩ(Max.) 36mΩ(Max.) SOP-8 EP 申请样品